By João P. Oliveira
This booklet is devoted to the research of parametric amplification with exact emphasis at the MOS discrete-time implementation. This implementation is tested by way of the presentation of a number of circuits the place the MOS parametric amplifier mobilephone is used: small achieve amplifier, comparator with embedded pre-amplification, discrete-time mixer/IIR-Filter, and analog-to-digital converter (ADC). Experimental effects are proven to validate the final layout technique.
Read or Download Parametric Analog Signal Amplification Applied to Nanoscale Cmos Technologies PDF
Best applied books
In the past few a long time we have now witnessed an period of exceptional progress within the box of molecular biology. In 1950 little or no used to be recognized of the chemical structure of organic structures, the way within which info used to be trans mitted from one organism to a different, or the level to which the chemical foundation of lifestyles is unified.
Legumes contain many extremely important crop vegetation that give a contribution very severe protein to the diets of either people and animals worldwide. Their designated skill to mend atmospheric nitrogen in organization with Rhizobia enriches soil fertility, and establishes the significance in their area of interest in agriculture.
The relations of statistical versions referred to as Rasch versions began with an easy version for responses to questions in academic checks offered including a couple of comparable types that the Danish mathematician Georg Rasch known as versions for size. because the starting of the Fifties using Rasch versions has grown and has unfold from schooling to the dimension of overall healthiness prestige.
- About Vectors
- Applied Computational Intelligence in Engineering and Information Technology: Revised and Selected Papers from the 6th IEEE International Symposium on Applied Computational Intelligence and Informatics SACI 2011
- Trends in Applied Intelligent Systems, 23rd International Conference on Industrial Engineering and Other Applications of Applied Intelligent Systems, IEA AIE 2010, Cordoba, Spain, June 1-4, 2010, Proceedings, Part III
- Applied natural science: environmental issues and global perspectives
- Applied Time Series Analysis I. Proceedings of the First Applied Time Series Symposium Held in Tulsa, Oklahoma, May 14–15, 1976
- Methods and theories for the solution of problems of geometrical constructions applied to 410 problems.
Extra resources for Parametric Analog Signal Amplification Applied to Nanoscale Cmos Technologies
Also, in addition to GIDL, the injection of hot-carrier from the substrate to the gate can happen if high electric fields are present in the gate-drain overlap region. All these contributions depend directly from oxide thickness and therefore will increase as tox is downscaled. • Junction related: If the drain voltage is high enough, the parasitic diode between the drain and substrate could be strongly reverse biased originating a reverse leakage current. This component is strongly dependent on temperature and, for a fixed sized transistor, it is inversely proportional to the technology scaling factor.
5 Simplified model of a MOSFET distributed amplifier mode is used as the idling circuit. Additionally, the structure processes the traveling wave generated by the pump signal which provides, by modulating the capacitance of the varactors, a time varying coupling between the two propagating modes. This coupling behavior originates the necessary AC energy transfer for the parametric amplification to work. 9 dB), 100 MHz of bandwidth, with a 10 mW pump signal at 890 MHz.
The mechanism behind this component takes place at depletion regions close to the heavily doped drain junction. A sufficiently strong electric field applied in this region may originate a current flow between the drain and the substrate due to band to band tunneling effect. This component increases exponentially with the decrease of the effective gate length, due to higher lightly doped-drain or pocket-doping concentrations, . • Punch-through: another SCE effect (in complement to DIBL) that arise when the depletion regions associated to the source and drain PN junction touch each other.
Parametric Analog Signal Amplification Applied to Nanoscale Cmos Technologies by João P. Oliveira