Parametric Analog Signal Amplification Applied to Nanoscale - download pdf or read online

By João P. Oliveira

ISBN-10: 1461416701

ISBN-13: 9781461416708

ISBN-10: 146141671X

ISBN-13: 9781461416715

This booklet is devoted to the research of parametric amplification with exact emphasis at the MOS discrete-time implementation. This implementation is tested by way of the presentation of a number of circuits the place the MOS parametric amplifier mobilephone is used: small achieve amplifier, comparator with embedded pre-amplification, discrete-time mixer/IIR-Filter, and analog-to-digital converter (ADC). Experimental effects are proven to validate the final layout technique.

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Extra resources for Parametric Analog Signal Amplification Applied to Nanoscale Cmos Technologies

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Also, in addition to GIDL, the injection of hot-carrier from the substrate to the gate can happen if high electric fields are present in the gate-drain overlap region. All these contributions depend directly from oxide thickness and therefore will increase as tox is downscaled. • Junction related: If the drain voltage is high enough, the parasitic diode between the drain and substrate could be strongly reverse biased originating a reverse leakage current. This component is strongly dependent on temperature and, for a fixed sized transistor, it is inversely proportional to the technology scaling factor.

5 Simplified model of a MOSFET distributed amplifier mode is used as the idling circuit. Additionally, the structure processes the traveling wave generated by the pump signal which provides, by modulating the capacitance of the varactors, a time varying coupling between the two propagating modes. This coupling behavior originates the necessary AC energy transfer for the parametric amplification to work. 9 dB), 100 MHz of bandwidth, with a 10 mW pump signal at 890 MHz.

The mechanism behind this component takes place at depletion regions close to the heavily doped drain junction. A sufficiently strong electric field applied in this region may originate a current flow between the drain and the substrate due to band to band tunneling effect. This component increases exponentially with the decrease of the effective gate length, due to higher lightly doped-drain or pocket-doping concentrations, [33]. • Punch-through: another SCE effect (in complement to DIBL) that arise when the depletion regions associated to the source and drain PN junction touch each other.

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Parametric Analog Signal Amplification Applied to Nanoscale Cmos Technologies by João P. Oliveira


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